Preparation of Experiments on Growing Zinc–Cadmium Telluride Crystals in Microgravity

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Cd1-xZnxTe crystals are necessary for the production of ionizing radiation detectors widely used in science, technology, medicine and other fields. Internal stresses during crystallization lead to generation of dislocations and low-angle boundaries. Typical problem of melt crystal growth of Cd-Zn-Te compounds are tellurium inclusions, which deteriorate detector performance. Microgravity conditions provide unique opportunities for growing high-quality crystals due to the absence of convection, more equilibrium conditions of melt mixing, and a decrease in internal stresses. Since the properties of such crystals strongly depend on the production conditions, seeds and a feed ingot with specified compositions and structure are required. Ampoules with two compositions of materials have been prepared for the space experiment. Crystals of different compositions Cd0.96Zn0.04Te and Cd0.9Zn0.1Te were produced for two charges. They consist of an oriented seed, solvent, and feeding ingot, which are single-phased, single crystalline, have certain crystallographic orientation, meet demands for growth of Cd–Zn–Te crystals in microgravity. Ampoules containing these materials were sent to International Space Station for crystal growth on equipment already assembled at “Nauka” station.

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作者简介

А. Аzhgalieva

Osipyan Institute of Solid State Physics of the RAS

编辑信件的主要联系方式.
Email: azhgalieva@issp.ac.ru
俄罗斯联邦, Chernogolovka

Е. Borisenko

Osipyan Institute of Solid State Physics of the RAS

Email: borisenk@issp.ac.ru
俄罗斯联邦, Chernogolovka

D. Borisenko

Osipyan Institute of Solid State Physics of the RAS

Email: azhgalieva@issp.ac.ru
俄罗斯联邦, Chernogolovka

А. Burmistrov

Research and Development Institute for Launch Complexes

Email: azhgalieva@issp.ac.ru
俄罗斯联邦, Moscow

N. Кolesnikov

Osipyan Institute of Solid State Physics of the RAS

Email: azhgalieva@issp.ac.ru
俄罗斯联邦, Chernogolovka

А. Тimonina

Osipyan Institute of Solid State Physics of the RAS

Email: azhgalieva@issp.ac.ru
俄罗斯联邦, Chernogolovka

А. Senchenkov

Research and Development Institute for Launch Complexes

Email: azhgalieva@issp.ac.ru
俄罗斯联邦, Moscow

Т. Fursova

Osipyan Institute of Solid State Physics of the RAS

Email: azhgalieva@issp.ac.ru
俄罗斯联邦, Chernogolovka

О. Shakhlevich

Osipyan Institute of Solid State Physics of the RAS

Email: azhgalieva@issp.ac.ru
俄罗斯联邦, Chernogolovka

参考

  1. Xu Y.D., Jie W.Q., He Y.H., Guo R.R., Tao W.A.N.G., Zha G.Q. // Prog. Nat. Sci.: Mater. Int. 2011. V. 21. P. 66.
  2. Roy U.N., Camarda G.S., Cui Y., Gul R, Yang G., Zazvorka J., Dedic V., Franc J., James R.B. // Sci. Rep. 2019. V. 9. Р. 7303. https://www.doi.org/10.1038/s41598-019-43778-3
  3. Auricchio N., Marchini L., Caroli E., Cola A., Farella I., Donati A., Zappettini A. // IEEE Trans. Nucl. Sci. 2011. V. 58. Iss. 2. P. 552. https://www.doi.org/10.1109/TNS.2010.2103324
  4. Davydov L., Fochuk P., Zakharchenko A., Kutny V., Rybka A., Kovalenko N., Sulima S., Terzin I., Gerasimenko A., Kosmyna M., Sklyarchuk V., Kopach O., Panchuk O., Pudov A., Bolotnikov A.E., James R.B. // IEEE Trans. Nucl. Sci. 2015. V. 62. № 4. Р. 1779. https://www.doi.org/10.1109/TNS.2015.2448939
  5. Egarievwe S.U., Yang G., Egarievwe A.A., Okwechime I.O., Gray J., Hales Z.M., Hossain A., Camarda G.S., Bolotnikov A.E., James R.B. // Nucl. Instrum. Methods Phys. Res. 2015. V. 784. P. 51. https://www.doi.org/10.1016/j.nima.2015.02.006
  6. Schlesinger T.E., Brunett B., Yao H., Vanscyoc J.M., James R.B., Egarievwe S.U., Chattopadhyay K., Ma X.-Y., Burger A., Giles N., El-Hanany U., Shahar A., Tsigelman A. // J. Electronic Mater. 1999. V. 28. № 6. P. 864. https://www.doi.org/10.1007/s11664-999-0085-z
  7. Sordo S.D., Abbene L., Caroli E., Mancini A.M., Zappettini A., Ubertini P. // Sensors. 2009. V. 9 № 5. P. 3491. https://www.doi.org/10.3390/s90503491
  8. Roy U.N., Burger A., James R.B. // J. Crystal Growth. 2013. V. 379. P. 57. https://www.doi.org/10.1016/j.jcrysgro.2012.11.047
  9. Hawkins S.A., Villa-Aleman E., Duff M.C., Hunter D.B., Burger A., Groza M., Buliga V., Black D.R. // J. Electronic Mater. 2008. V. 37. № 9. P. 1438.
  10. Павлюк М.Д. Детекторные кристаллы на основе CdTe и Cd1-xZnxTe для прямого счета рентгеновских и гамма – квантов: Дисс. канд. физико-математических наук: 01.04.07. Москва: ФНИЦ “Кристаллография и фотоника” РАН, 2020.153 с.
  11. Sato K., Seki Y., Matsuda Y., Oda O. // J. Crystal Growth. 1999. V. 197. № 3. P. 413. https://www.doi.org/10.1016/S0022-0248(98)00739-8
  12. Verger L., Drezet A., Gros d’Aillon E., Mestais C., Monnet O., Montеmont G., Dierre F., Peyret O. New perspectives in gamma-ray imaging with CdZnTe/CdTe. // IEEE Symposium Conf. Record Nucl. Sci. 2005. 16–22 October 2004, Rome, Italy. https://www.doi.org/10.1109/NSSMIC.2004.1462721
  13. Пряникова Е.В., Мирофянченко А.Е., Смирнова Н.А, Силина А.А., Бурлаков И.Д., Гришечкин М.Б., Денисов И.А, Шматов Н.И. // Прикладная физика. 2016. № 2. С. 82.
  14. Triboulet R., Tromson-Carli A., Lorans D., Nguyen Duy T. // J. Electronic Mat. 1993. V. 22. № 8. P. 827. https://www.doi.org/10.1007/BF02817493
  15. Hew N., Spagnoli D., Faraone L. // ACS Appl. Electron. Mater. 2021. V. three. № 11. P. 5102. https://www.doi.org/10.1021/acsaelm.1c00835
  16. Borisenko E.B., Kolesnikov N.N., Senchenkov A.S., Fiederle M. // J. Crystal Growth. 2017. V. 457. P. 262. https://www.doi.org/10.1016/j.jcrysgro.2016.08.063
  17. Kolesnikov N.N., James R.B., Berzigiarova N.S., Kulakov M.P. HPVB and HPVZM growth of CdZnTe, CdSe, and ZnSe crystals. // X-ray and Gamma-ray Detectors and Applications IV. Proc. SPIE. San-Diego, December 2002. V. 4787. P. 93.
  18. Левченко А.А., Колесников Н.Н., Борисенко Д.Н. Ампула для выращивания кристаллов в условиях микрогравитации: пат. на изобретение 2547758 РФ. № 2014105414/05; заявл. 13.02.14; опубл. 10.04.15, Бюл. № 10. 4 с.
  19. Weinstein M., Wolff G.A., Da B.N. // J. Appl. Phys. Lett. 1965. V. 6. № 4. P. 73. https://www.doi.org/10.1063/1.1754172
  20. Kulakov M.P., Balyakina V. // J. Сrystal Growth. 1991. V. 113. № 3–4, P. 653. https://www.doi.org/10.1016/0022-0248(91)90101-A
  21. Hossain A., Bolotnikov A.E., Camarda G.S., Cui Y, Yang G., James R.B. // J. Crystal Growth. 2008. V. 310. № 21. P. 4493. https://www.doi.org/10.1016/j.jcrysgro.2008.07.088

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2. Fig. 1. Lauegram of the sample of composition Cd0.96Zn0.04Te

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3. Fig. 2. Ampoule for crystal growth in microgravity: a) - assembly drawing: 1 - ampoule, 2 - inoculum, 3 - solvent zone, 4 - feed ingot, 5 - insert, 6 - spring, 7 - filler, 8 - stopper; b) - general view with loading after assembly and hermetic sealing

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4. Fig. 3. Results of X-ray phase analysis of the sample of composition Cd0.96Zn0.04Te

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5. Fig. 4. Axial distribution of components of Cd0.9Zn0.1Te crystal according to X-ray spectral analysis data

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6. Fig. 5. Transmission spectra of the samples of composition Cd0.9Zn0.1Te (a) and Cd0.96Zn0.04Te (b) in the visible range: a sharp change in transmittance occurs at the emission wavelengths of 790 and 817 nm, respectively

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