Structure, stacking faults and electrochemical behavior of α-Ta prepared by chemical vapor deposition

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Дәйексөз келтіру

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Аннотация

Using X-ray diffraction, scanning electron microscopy, glow discharge emission spectroscopy, electrochemistry and strength assessment, stacking faults in tantalum deposited in a helium environment on a copper substrate by chemical vapor deposition and their effect on the protective properties have been studied. It is shown that the probability of formation of stacking faults in deposited bcc tantalum in the {112} planes is a sensitive parameter with respect to the deposition conditions (temperature and helium content). With an increase in helium concentration from high to medium values, the sum of the probabilities of the formation of deformation (α) and twinning (β) stacking faults 1.5α + β in α-Ta increases five times (from 0.025 to 0.13%), with a decrease in temperature from 800 to 750°C — 35 times (from 0.025 to 0.89%). A decrease in the probability of formation of stacking defects in deposited α-Ta tantalum is associated with a significant increase in corrosion resistance and adhesion strength of the coating to the substrate. A mechanism for the formation of metastable hcp phases of tantalum on stacking faults in α-Ta in the {112} planes is proposed.

Толық мәтін

Рұқсат жабық

Авторлар туралы

A. Lubnin

Udmurt Federal Research Center, Ural Branch of the RAS

Хат алмасуға жауапты Автор.
Email: qrcad@udman.ru
Ресей, Izhevsk, 426067

V. Lad’yanov

Udmurt Federal Research Center, Ural Branch of the RAS

Email: qrcad@udman.ru
Ресей, Izhevsk, 426067

B. Pushkarev

Udmurt Federal Research Center, Ural Branch of the RAS

Email: qrcad@udman.ru
Ресей, Izhevsk, 426067

I. Sapegina

Udmurt Federal Research Center, Ural Branch of the RAS

Email: qrcad@udman.ru
Ресей, Izhevsk, 426067

R. Faizullin

Udmurt Federal Research Center, Ural Branch of the RAS

Email: qrcad@udman.ru
Ресей, Izhevsk, 426067

L. Baldaev

LLC Technological Systems of Protective Coatings

Email: qrcad@udman.ru
Ресей, Moscow, 108851

S. Treschev

Udmurt Federal Research Center, Ural Branch of the RAS

Email: qrcad@udman.ru
Ресей, Izhevsk, 426067

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2. Fig. 1. SEM images of tantalum coatings obtained by chemical vapor deposition at 800°C and high (a), medium (b) and low (c) helium concentrations y, at low y and 750 (d), 700 (d) and 650°C (e).

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3. Fig. 2. Content of carbon, nitrogen and oxygen in tantalum coatings obtained by chemical vapor deposition at different temperatures and helium concentrations y. Relative errors in determining concentrations do not exceed 20%.

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4. Fig. 3. X-ray diffraction patterns of tantalum coatings obtained by chemical vapor deposition at 800°C and high (a), medium (b) and low (c) helium concentrations.

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5. Fig. 4. X-ray diffraction patterns of tantalum coatings obtained by chemical vapor deposition at a low helium concentration and at a temperature of: a — 750; b — 700; c — 650°C.

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6. Fig. 5. Williamson–Hall plot for bcc tantalum obtained by chemical vapor deposition at 800°C and medium helium concentration y (□), 750°C and low y (○), 800°C and low y (£). Errors in the plot do not exceed the sizes of the dots.

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7. Fig. 6. Scratch test of tantalum coatings obtained by chemical vapor deposition at 800°C and high (a), medium (b) and low (c) helium concentrations y, at low y and 750 (d), 700 (d) and 650°C (e).

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8. Fig. 7. Polarization curves of tantalum coatings obtained by chemical vapor deposition at 800°C and high (1), medium (2) and low (3) helium concentrations y, at low y and 750 (4), 700 (5) and 650°C (6), as well as tantalum (7) and an uncoated copper substrate (8). The shooting environment was 0.5 M H2SO4.

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9. Fig. 8. Results of electrochemical tests in 0.5 M H2SO4 solution of tantalum coatings depending on the conditions of their deposition (temperature and helium content y): icor and Ecor are the current density and corrosion potential, respectively. Data for pure metals Cu and Ta are also given. Relative errors in determining icor and Ecor do not exceed 15%.

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10. Fig. 9. Schematic diagram of the mechanism of the BCC → HCP phase transformation: a — projection of the initial structure with a BCC lattice onto the (112) plane; b — structure modified due to a stacking fault on the (112) plane, as well as compression in the [100] direction with simultaneous stretching along the [110] direction; c — structure of the resulting HCP phase.

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