Effect of О2+ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

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Using the methods of secondary ion mass spectrometry, elastic peak electron spectroscopy and Auger electron spectroscopy, the elemental and chemical composition of the surface, concentration profiles of the distribution of atoms over the depth of silicon implanted with O2+ ions with energy E0 = 1 keV at a dose of D = 6 × 1016 cm–2 were studied. It was found that oxides and suboxides of Si (SiO2, Si2O and SiO0.5) were formed in the ion-doped layer, and it also contained unbound O and Si atoms. Post-implantation annealing at 850–900 K led to the formation of a stoichiometric SiO2 layer ~25–30 Å thick.

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作者简介

G. Allayarova

Karshi State University

编辑信件的主要联系方式.
Email: allayarova5030@mail.ru
乌兹别克斯坦, Karshi

B. Umirzakov

Таshkent State Technical University

Email: allayarova5030@mail.ru
乌兹别克斯坦, Таshkent

A. Tashatov

Karshi State University

Email: allayarova5030@mail.ru
乌兹别克斯坦, Karshi

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2. Fig. 1. The design of an ion gun for creating a beam of gas ions: 1 – filament; 2 – anode; 3 – diaphragm system; 4-6 – focusing and accelerating electrodes

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3. Fig. 2. The mass spectrum of Si implanted with O2+ ions with E0 = 1 keV at D = 6 × 1016 cm–2, measured by bombardment with Cs+ ions with E0 = 6.7 keV

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4. Fig. 3. Spectra of elastically reflected L23VV Si electrons: 1 – pure; 2 – after implantation of O2+ ions with E0 = 1 keV and D = 6 × 1016 cm–2, 3 – after annealing at 900 K for 30 min

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5. Fig. 4. Dependences of the concentration of oxygen atoms CO(d) for Si implanted with O2+ ions with E0 = 1 keV: 1 – total concentration; 2 – in SiO2 oxide; 3 – in the compound SiOx(SiO + SiO0.5)

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