Study of xenon ion-induced silicon amorphization using transmission electron microscopy and Monte Carlo simulation

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Xenon ions with energies of 5 and 8 keV were used to amorphize a single-crystal silicon substrate. Cross-sectional samples of the irradiated areas were examined by transmission electron microscopy in the bright field mode, and the thicknesses of the amorphized layers were determined based on the analysis of the obtained images. Simulation of the ion bombardment process was carried out using the Monte Carlo technique along with critical point defect density model, which made it possible to obtain theoretical estimates of the thickness of these layers. The calculation results were compared with experimental data. Monte Carlo simulation was shown to describe low-energy xenon ion-induced amorphization of single-crystal silicon with acceptable precision.

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O. Podorozhniy

National Research University of Electronic Technology

编辑信件的主要联系方式.
Email: lemi@miee.ru
俄罗斯联邦, Zelenograd, Moscow

A. Rumyantsev

National Research University of Electronic Technology

Email: lemi@miee.ru
俄罗斯联邦, Zelenograd, Moscow

N. Borgardt

National Research University of Electronic Technology

Email: lemi@miee.ru
俄罗斯联邦, Zelenograd, Moscow

D. Minnebaev

Lomonosov Moscow State University

Email: lemi@miee.ru
俄罗斯联邦, Moscow

A. Ieshkin

Lomonosov Moscow State University

Email: lemi@miee.ruро
俄罗斯联邦, Moscow

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2. Fig. 1. Bright-field TEM images of silicon layers amorphized by xenon ions with energies of 5 (a) and 8 keV (c), with averaged normalized intensity profiles and their derivatives superimposed on them; intensity profiles (1) corresponding to the images and calculated normalized distributions of vacancy concentrations (2) and (3) (b), (d). Near the right edge of the images there are areas of the protective Pt + a-C layer; on the graphs, the middles of the transition regions between the crystal and the amorphous layer are marked by solid vertical lines, and the positions of the sample surfaces are marked by dashed lines.

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