Composition of silicon jointly doped with impurity atoms of gallium and phosphorus

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In this work, the morphology and composition of the silicon surface are experimentally studied using a scanning electron microscope, X-ray phase analysis, and various peaks in the Raman spectra. The spectral characteristics of silicon doped with impurity atoms of phosphorus and gallium have been studied. It was shown, that in the silicon lattice simultaneously doped with gallium and phosphorus atoms impurity atoms created binary complexes. Experimental determination of the concentration of gallium and phosphorus atoms made it possible to reveal a significant increase in the concentration of gallium, in comparison with its fundamental solubility in silicon. It is shown that a sufficiently large concentration of such elementary cells can lead to a significant change in the electrophysical parameters of silicon, i.e. the possibility of obtaining a new silicon-based material.

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作者简介

N. Zikrillaev

Tashkent State Technical University

编辑信件的主要联系方式.
Email: zikrillaev@mail.ru
乌兹别克斯坦, 100095, Tashkent

S. Koveshnikov

Tashkent State Technical University

Email: zikrillaev@mail.ru
乌兹别克斯坦, 100095, Tashkent

X. Turekeev

Tashkent State Technical University

Email: axmet-8686@mail.ru
乌兹别克斯坦, 100095, Tashkent

B. Ismailov

Tashkent State Technical University

Email: zikrillaev@mail.ru
乌兹别克斯坦, 100095, Tashkent

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2. Fig. 1. Morphology (a) and composition (b) of the near-surface layer of a silicon sample after diffusion of impurity phosphorus and gallium atoms according to scanning electron microscopy data. The elemental composition of the sample according to the analysis results: Si 86.2(8); Ga 9.2(9); P 4.2(2); O 0.4(2) wt. %.

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3. Fig. 2. X-ray of silicon doped with phosphorus and gallium atoms. The graph shows which phases correspond to the found reflexes. The 200GaP and 400Si reflexes are shown on an enlarged scale.

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4. Fig. 3. Raman spectrum of a sample of monocrystalline gallium phosphide. The maxima correspond to transverse (1) and longitudinal (2) optical phonons.

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5. Fig. 4. Raman scattering spectrum of a sample of monocrystalline silicon doped with phosphorus and gallium atoms. The maxima correspond to transverse (1) and longitudinal (2) optical phonons and the Si–Si interaction (3).

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6. Fig. 5. Images of the surface of silicon doped with phosphorus and gallium atoms (a) and silicon doped with phosphorus atoms only (b) obtained by atomic force microscopy. The size of the scanning field is 10×10 microns.

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7. Fig. 6. Spectral dependence of the short-circuit current of silicon samples doped only with phosphorus atoms (1) and doped with gallium phosphide molecules (2).

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8. Fig. 7. The proposed Si2GaP binary unit cell in silicon.

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9. Fig. 8. The band structure of silicon with enriched binary Si2AIIIBV unit cells.

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