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No 7 (2024)
Formation of thin GaAs buffer layers on silicon for light-emitting devices
Lendyashova V.V., Ilkiv I.V., Borodin B.R., Kirilenko D.A., Dragunova A.S., Shugabaev T.М., Cirlin G.E.
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(Rus)
No 12 (2023)
Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation
Kozlovski V.V., Vasil’ev A.E., Lebedev A.A., Zhurkin E.E., Levinshtein M.E., Strelchuk A.M.
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(Rus)
No 1 (2024)
Composition of silicon jointly doped with impurity atoms of gallium and phosphorus
Zikrillaev N.F., Koveshnikov S.V., Turekeev X.S., Ismailov B.K.
PDF
(Rus)
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