Manganite Heterostructures: SrIrO3/La0.7Sr0.3MnO3 and Pt/La0.7Sr0.3MnO3 for Generation and Registration of Spin Current

Мұқаба

Дәйексөз келтіру

Толық мәтін

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Аннотация

This paper presents the results of experimental studies of the cross section of the boundaries of the SrIrO3/La0.7Sr0.3MnO3 и Pt/La0.7Sr0.3MnO3, heterostructures, in which, upon excitation of ferromagnetic resonance in a La0.7Sr0.3MnO3 film, a spin current arises that flows through the boundary in structure. Epitaxial growth of thin films of strontium iridate SrIrO3 and manganite La0.7Sr0.3MnO3 on a (110) NdGaO3 single-crystal substrate was carried out using magnetron sputtering at high temperature in a mixture of argon and oxygen gases. The spin mixing conductance, which determines the amplitude of the spin current and generally has real Re g↑↓ and imaginary Im g↑↓ parts, was determined from the frequency dependence of the FMR spectrum of the LSMO film and heterostructures. It is shown that the Im g↑↓ quantity, can play an important role in determining the spin Hall angle (θSH) from the angular dependence of the spin magnetoresistance. For the SrIrO3/La0.7Sr0.3MnO3 heterostructures, θSH turned out to be significantly higher (almost an order of magnitude) than for the Pt/La0.7Sr0.3MnO3 heterostructure.

Толық мәтін

Рұқсат жабық

Авторлар туралы

G. Ovsyannikov

Kotelnikov Institute of Radio Engineering and Electronics of the RAS

Хат алмасуға жауапты Автор.
Email: gena@hitech.cplire.ru
Ресей, Moscow

K. Constantinian

Kotelnikov Institute of Radio Engineering and Electronics of the RAS

Email: karen@hitech.cplire.ru
Ресей, Moscow

G. Ulev

Kotelnikov Institute of Radio Engineering and Electronics of the RAS; National Research University “High School of Economy”, The Faculty of Physics

Email: gena@hitech.cplire.ru
Ресей, Moscow; Moscow

A. Shadrin

Kotelnikov Institute of Radio Engineering and Electronics of the RAS; Moscow Institute of Physics and Technology (National Research University)

Email: gena@hitech.cplire.ru
Ресей, Moscow; Dolgoprudny

P. Lega

Kotelnikov Institute of Radio Engineering and Electronics of the RAS; Рeoples' Friendship University of Russia (RUDN University)

Email: gena@hitech.cplire.ru
Ресей, Moscow; Moscow

A. Orlov

Kotelnikov Institute of Radio Engineering and Electronics of the RAS

Email: gena@hitech.cplire.ru
Ресей, Moscow

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Жүктеу
2. Fig. 1. X-ray diffractogram from the SrIrO3/La0.7Sr0.3MnO3 heterostructure. The reflection indices from SrIrO3 (SIO), La0.7Sr0.3MnO3 (LSMO) and NdGaO3 substrate (NGO) are shown

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3. Fig. 2. a - Cross section of SrIrO3/La0.7Sr0.3MnO3 heterostructure on NdGaO3 substrate obtained by transmission electron microscope. PtT - technological film of platinum deposited on the heterostructure by active chemical atomization. b - Section in enlarged scale. c - Layer-by-layer elemental composition of the heterostructure

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4. Fig. 3. a - Cross section of Pt/La0.7Sr0.3MnO3 heterostructure on NdGaO3 substrate, obtained on a transmission electron microscope. PtT - technological platinum film, b - layer-by-layer elemental composition of the heterostructure

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5. Fig. 4. Schematic representation of a sample with SrIrO3/La0.7Sr0.3MnO3 heterostructure grown on a (110)NdGaO3 substrate with Pt contact pads. The leads for voltage removal are labeled as V1 and V2 - for measuring both longitudinal Rx and Ry transverse spin magnetoresistance

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6. Fig. 5. Angle dependences of normalized magnetoresistance values of a) SrIrO3/La0.7Sr0.3MnO3 and b) Pt/La0.7Sr0.3MnO3 heterostructure taken in the H = 100 Å field at T = 300 K. Experiment - square symbols, approximation - solid line. Longitudinal Rx and transverse Ry magnetoresistance are shown

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