Effect of the bending of reflecting planes in crystals on the propagation of an anomalous wave in x-ray diffraction

I. A. Smirnova; Смирнова И. А.; E. V. Suvorov; Суворов Э. В.

doi:10.31857/S1028096024010153

Effect of the bending of reflecting planes in crystals on the propagation of an anomalous wave in x-ray diffraction

Autores: Smirnova I.A.¹, Suvorov E.V.¹
Afiliações:
1. Osipyan Institute of Solid State Physics RAS
Edição: Nº 1 (2024)
Páginas: 109-112
Seção: Articles
URL: https://archivog.com/1028-0960/article/view/664693
DOI: https://doi.org/10.31857/S1028096024010153
EDN: https://elibrary.ru/DFTJBY
ID: 664693

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Resumo

The effect of bending of reflection planes in crystals on the propagation of an anomalous wave in X-ray diffraction has been studied by numerical simulation methods. The bending sign of the reflection planes was found to affect radically the propagation of the X-ray wave field in the crystal. The Bormann effect was shown to be suppressed at certain bending parameters.

Palavras-chave

diffraction, interference, X-rays, crystal lattice, single crystals, interference fringes, crystal lattice defects, local deformations, bending of reflecting planes, bending sign

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Sobre autores

I. Smirnova

Osipyan Institute of Solid State Physics RAS

Email: suvorov@issp.ac.ru
Rússia, 142432, Moscow Region, Chernogolovka

E. Suvorov

Osipyan Institute of Solid State Physics RAS

Autor responsável pela correspondência
Email: suvorov@issp.ac.ru
Rússia, 142432, Moscow Region, Chernogolovka

Bibliografia

Грушко Ю.С., Лапин Е.Г., Сумбаев О.И., Тю- нис А.В. // ЖЭТФ. 1978. Т. 74. Вып. 6. С. 2280.
Суворов Э.В., Смирнова И.А. // Поверхность. Рентген., синхротр. и нейтрон. исслед. 2008. № 10. С. 7.
Смирнова И.А., Суворов Э.В., Шулаков Е.В. // ФТТ. 2007. T. 49. Вып. 6. С. 1050.
Суворов Э.В. Смирнова И.А. // Поверхность. Рентген., синхротр. и нейтрон. исслед. 2021. № 12. С. 23. https://doi.org/10.31857/S1028096021120232
Хирт Дж., Лоте И. Теория дислокаций. М.: Атомиздат, 1972. 599 с.
Takagi S.J. // J. Phys. Soc. Jpn. 1969. V. 26. № 5. P. 1239.
Инденбом В.Л., Чуховский Ф.Н. // Кристаллография. 1971. Т. 16. № 6. С. 1101.
Инденбом В.Л., Чуховский Ф.Н. // УФН. 1972. Т. 107. № 2. С. 229.
Authier A. Dynamical Theory of X-ray Diffraction. Oxford: Oxford University Press, 2002. 674 p.

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2. Fig. 1. Edge dislocation: a is a flat image of the local disorientation field [5] (m is the plane of mirror symmetry, n is the plane of color symmetry); b is the experimentally observed diffraction image [2] (Si single crystal with a thickness of 1810 microns, crystal surface (111), reflection 2_20, CuKa radiation).

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3. Fig. 2. Three–dimensional image of the field of local disorientation of the β edge dislocation (a); two-dimensional sections parallel to the Yß plane at distances from the origin x1 = 35, x2 = -35 microns; b is a section parallel to the Xß plane at x = 0.

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4. Fig. 3. Diagram of the signs of bending of the reflecting planes used in the work: hkl – indices of the reflecting planes; R – radius of bending of the reflecting planes; Khkl – diffraction vector.

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5. Fig. 4. The relative intensity I/Type of the anomalous (Bormann) wave field in the center of the scattering triangle, depending on the bending radius R of the reflecting planes (normalized to the intensity of the ideal crystal Iid).

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6. Fig. 5. Numerical simulation of the wave field in the scattering triangle in the case of a thick crystal with different bending signs of the reflecting planes.

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7. Fig. 6. Fragments of the wave field in the scattering triangles of a thin crystal (150 microns), where normal and abnormal waves are present (numerical simulation).