Electron–plasmon interaction in Bi2Te3–Sb2Te3
- 作者: Stepanov N.P.1
-
隶属关系:
- Zabaikalsky State University
- 期: 编号 4 (2024)
- 页面: 57-61
- 栏目: Articles
- URL: https://archivog.com/1028-0960/article/view/664657
- DOI: https://doi.org/10.31857/S1028096024040071
- EDN: https://elibrary.ru/GJBQGD
- ID: 664657
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详细
During the study of the optical properties of solid solutions of Bi2Te3–Sb2Te3 p-type conductivity in the infrared range, it was found that in a single crystal Bi0.6Sb1.4Te3, deformation of the reflection coefficient spectra is observed in the frequency range of observation of the plasma resonance of free charge carriers. The deformation of the plasma edge increases with a decrease in temperature. Using the Kramers–Kronig dispersion relations from experimental reflection spectra, the spectral dependences of the real ε1 and imaginary parts ε2 of the permittivity function, as well as the energy loss function characterizing the rate of energy dissipation, are calculated. Splitting of the peak of the energy loss function was found, indicating the effect on the plasma resonance from another process occurring in the electronic system. It is established that such a process is the transition of electrons between nonequivalent extremes of the valence band. Convergence of collective and single-particle energies.
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作者简介
N. Stepanov
Zabaikalsky State University
编辑信件的主要联系方式.
Email: np-stepanov@mail.ru
俄罗斯联邦, 672038, Chita
参考
- Дюгаев А.М. // Письма в ЖЭТФ. 1992. Т. 55. № 5. С. 2171.
- Gerlah E., Grosse P., Rautenberg M., Senske M. // Physica Status Solidi B. 1976. V. 75. Iss. 2. P. 553. https://doi.org/10.1002/pssb.2220750218
- Broerman J.G. // Phys. Rev. B. 1970. V. 2. P. 1818. https://doi.org/10.1103/PhysRevB.2.1818
- Grynberg M., Le Toulles R., Balkanski M. // Phys. Rev. B. 1974. V. 9. P. 517. https://doi.org/10.1103/PhysRevB.9.517
- Broerman J.G. // Phys. Rev. B. 1972. V. 5. P. 397. https://doi.org/10.1103/PhysRevB.5.397
- Nanabe A., Noguchi D., Mitsuishi A. // Physica Status Solidi B. 1978. V. 90. P. 157.
- Tussing P., Rosental W., Hang A. // Physica Status Solidi B. 1972. V. 52. P. 451.
- Alstrom P., Nielsen H.J. // J. Phys. C. Solid State Phys. 1981. V. 14. P. 1153.
- Степанов Н.П., Иванов М.С. // Физика и техника полупроводников. 2022. Т. 56. Вып. 12. С. 1103. https://www.doi.org/10.21883/FTP.2022.12.54508.4243
- Jung S.-J., Kim S.K., Park H.-H., Hyun D.-B., Baek S.-H., Kim J.-S. // J. Electronic Mater. 2014. V. 43. P. 1726. https://doi.org/10.1007/s11664-013-2851-1
- Meroz O., Elkabets N., Gelbstein Y. // ACS Appl. Energy Mater. 2020. V. 3. P. 2090. https://doi.org/10.1021/acsaem.9b02133
- Liu W., Chi H., Walrath J. C., Chang A. // Appl. Phys. Lett. 2016. V. 108. P. 043902. https://doi.org/10.1063/1.4940923
- Bulat L.P., Drabkin I.A., Osvenskii V.B., Parkhomen-ko Yu.N., Pshenay-Severin D.A., Sorokin A.I., Igoni-na A.A., Bublik V.T., Lavrentev M.G. // J. Electronic Mater. 2015. V. 44. P. 1846. https://www.doi.org/10.1007/s11664-014-3570-y
- Лукьянова Л.Н., Бойков Ю.А., Усов О.А., Дани- лов В.А., Волков М.П. // Физика и техника полупроводников. 2017. Т. 51. № 7. С. 880. https://www.doi.org/10.21883/FTP.2017.07.44632.18
- Xiaojian L., Chaogang L., Xin L., Yujie Z., Bo Y. // Phys. Rev. Appl. 2020. V. 13. P. 041002. https://doi.org/10.1103/PhysRevApplied.13.041002
- Zhang D., Shi M., Zhu T., Xing D., Zhang H., Wang J. // Phys. Rev. Lett. 2019. V. 122. P. 206401. https://www.doi.org/https://doi.org/10.1103/PhysRev Lett.122.206401
- Scipioni K.L., Wang Z., Maximenko Y., Katmis F., Stei-ner C., Madhavan V. // Phys. Rev. B. 2018. V. 97. P. 125150. https://www.doi.org/https://doi.org/10.1103/PhysRev B.97.125150
- Ou Y., Liu C., Jiang G., Feng Y., Zhao D., Wu W., Wang X.-X., Li W., Song C., Wang L.-L., Wang W., Wu W., Wang Y., He K., Ma X.-C., Xue Q.-K. // Adv. Mater. 2018. V. 30. P. 1703062. https://www.doi.org/10.7498/aps.72.20230690
- Gong Y., Guo J., Li J., Zhu K., Liao M., Liu X., Zhang Q., Gu L., Tang L., Feng X., Zhang D., Li W., Song C., Wang L., Yu P., Chen X., Wang Y., Yao H., Duan W., Xu Y., Zhang S.-C., Ma X., Xue Q.-K., He K. // Chinese Phys. Lett. 2019. V. 36. № 7. P. 076801. https://www.doi.org/10.1088/0256-307x/36/7/076801
- Степанов Н.П., Калашников А.А., Урюпин О.Н. // Физика и техника полупроводников. 2021. Т. 55. № 7. С. 586. https://www.doi.org/10.21883/FTP.2021.07.51023.9647
- Wolff P.A. // Phys. Rev. Lett. 1970. V. 24. P. 266. https://www.doi.org/https://doi.org/10.1103/Phys RevLett.24.266
- Барышев Н.С. // Физика и техника полупроводников. 1975. Т.9. № 10. С. 2023.
- Elci A. // Phys. Rev. B. 1977. V. 16. P. 5443. https://doi.org/10.1103/PhysRevB.16.5443
- Шикторов П.Н. // Физика и техника полупроводников. 1986. Т. 20. № 6. С. 1089.
- Jablan M. // Phys. Rev. B. 2020. V. 101. P. 224503. https://doi.org/10.1103/PhysRevB.101.224503
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