Enviar artigo por via de e-mail Initiation of periodic relief development on the silicon surface under ion irradiation
- Autores: Smirnova M.A.1, Bachurin V.I.1, Mazaletsky L.A.1, Pukhov D.E.1, Churilov A.B.1
-
Afiliações:
- P.G. Demidov Yaroslavl State University
- Edição: Nº 3 (2025)
- Páginas: 97-101
- Seção: Articles
- URL: https://archivog.com/1028-0960/article/view/687689
- DOI: https://doi.org/10.31857/S1028096025030153
- EDN: https://elibrary.ru/EMQIRW
- ID: 687689
Citar
Acesso aberto
Acesso está concedido
Resumo
The report presents the results of studying the process of a periodic relief nucleation on the silicon surface irradiated with a 30 keV focused beam of gallium ions at ion beam incidence angles θ = 30°, 40° and 50°. It is shown that that the factors initiating the origin of periodic relief are: gallium precipitates in the near-surface silicon layer (θ = 30°), topographic heterogeneity in the form of a hole at the boundary of the bottom and the frontal wall of the sputtering crater (θ = 40° and 50°).
Palavras-chave
Texto integral
Sobre autores
M. Smirnova
P.G. Demidov Yaroslavl State University
Autor responsável pela correspondência
Email: vibachurin@mail.ru
Rússia, Yaroslavl
V. Bachurin
P.G. Demidov Yaroslavl State University
Email: vibachurin@mail.ru
Rússia, Yaroslavl
L. Mazaletsky
P.G. Demidov Yaroslavl State University
Email: vibachurin@mail.ru
Rússia, Yaroslavl
D. Pukhov
P.G. Demidov Yaroslavl State University
Email: vibachurin@mail.ru
Rússia, Yaroslavl
A. Churilov
P.G. Demidov Yaroslavl State University
Email: vibachurin@mail.ru
Rússia, Yaroslav
Bibliografia
- Muñoz-García J., Vázquez L., Castro M., Cago R., Redondo-Cubero A., Moreno-Barrado A., Cuerno R. // Mater. Sci. & Eng. R. 2014. V. 86. P. 1. https://doi.org/10.1016/j.mser.2014.09.00
- Vázquez L., Redondo-Cubero A., Lorenz K., Palomares F. J., Cuerno R. // J. Phys.: Condens. Matter. 2022. V. 34. P. 333002. https://doi.org/10.1088/1361-648X/ac75a1
- Bradley R.M., Harper M.E. // J. Vac. Sci. Technol. A. 1988. V. 6. P. 2390. https://doi.org/10.1116/1.575561
- Carter G., Vishnyakov V. // Surf. Interface Anal. 1995. V. 23. P. 514. https://doi.org/10.1002/sia.740230711
- Elst K., Vandervorst W. // J. Vac. Sci. Technol. A. 1994. V. 12. P. 3205. https://doi.org/ 10.1116/1.579239
- Smirnov V.K., Kibalov D.S., Krivelevich S.A., Lepshin P.A., Potapov E.V., Yankov R.A., Skorupa W., Makarov V.V., Danilin A.B. // Nucl. Instrum. Methods B. 1999. V. 147. P. 310. https://doi.org/10.1016/S0168-583X(98)00610-7
- Sigmund P. // J. Mater. Sci. 1973. V. 8. P.1545. https://doi.org/10.1007/BF00754888
- Wittmaack K. // Surf. Interface Anal. 2000. V. 29. P. 721. https://doi.org/10.1002/1096-9918(200010)29:10<721:: AID-SIA916>3.0.CO;2-Q
- Bachurin V.I., Lepshin P.A., Smirnov V.K. // Vacuum. 2000. V. 56. P. 241. https://doi.org/10.1016/S0042-207X(99)00194-3
- Frey L., Lehrer C., Ryssel H. // Appl. Phys. A. 2003. V. 76. P. 1017. https://doi.org/10.1007/s00339-002-1943-1
- Bachurin V.I., Zhuravlev I.V., Pukhov D.E., Rudy A.S., Simakin S.G., Smirnova M.A., Churilov A.B. // J. Surf. Invest. 2020. V. 14. P. 784. https://doi.org/10.1134/S1027451020040229
- Бачурин В.И., Смирнова М.А., Лобзов К.Н., Лебедев М.Е., Мазалецкий Л.А., Пухов Д.Э., Чурилов А.Б.// Поверхность. Рентген. синхротр. и нейтрон. исслед. 2024. № 7. С. 69. (Bachurin V.I., M.A. Smirnova M.A., Lobzov K.N., Lebedev M.E., Mazaletsky L.A., Pukhov D.E., Churilov A.B. // J. Surf. Invest. 2024. V.18. P. 822. https://doi.org/10.1134/S1027451024700514).
- Hofsäss H. // Appl. Phys. A. 2014. V. 114. P. 401. https://doi.org/10.1007/s00339-013-8170-9
Arquivos suplementares
