Double negative media based on magnetic metamaterials and semiconductors for the microwave frequency range

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Abstract

The results of theoretical study and MaxLLG program simulation of the ferromagnetic metamaterials with metallic (non-magnetic) inclusions, as well as the bigyrotropic media with the properties of a ferromagnetic semiconductor are presented. The possibility of obtaining the double negative media from such materials in that a backward electromagnetic wave exists at microwave frequencies is demonstrated.

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About the authors

S. V. Grishin

Saratov State University, named after N.G. Chernyshevsky

Author for correspondence.
Email: sergrsh@yandex.ru
Russian Federation, Astrakhanskaya Str., 83, Saratov, 410012

M. D. Amel’chenko

Saratov State University, named after N.G. Chernyshevsky

Email: sergrsh@yandex.ru
Russian Federation, Astrakhanskaya Str., 83, Saratov, 410012

A. V. Zhabova

Saratov State University, named after N.G. Chernyshevsky

Email: sergrsh@yandex.ru
Russian Federation, Astrakhanskaya Str., 83, Saratov, 410012

F. Yu. Ogrin

University of Exeter; MaxLLG Ltd.

Email: sergrsh@yandex.ru

Department of Physics, University of Exeter

United Kingdom, Exeter EX4 4QL; Exeter Science Park, Exeter EX5 2FN

S. A. Nikitov

Kotelnikov Institute of Radioengineering and Electronics of RAS

Email: sergrsh@yandex.ru
Russian Federation, Mokhivaya Str., 11, build. 7, Moscow, 125009

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Supplementary files

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2. Fig. 1. Schematic images of the analyzed structures: (a) – FM medium; (b) – FM metamaterial; (c) – enlarged fragment of the periodic lattice of the FM metamaterial, modeled in the MaxLLG program.

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3. Fig. 2. Frequency dependences of the effective material parameters µeff (curve 1) and εeff (curve 2) of (a) the FM medium and (b) the FM metamaterial. Region I is the DPS medium, region II is the MNG medium, region III is the DNG medium, and region IV is the ENG medium. The calculations are performed for H0 = 0.3 T, 4πM0 = 1750 G, εot = 16, r1 = 0.01 cm, r2 = 0.03 cm, and T = 0.2 cm.

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4. Fig. 3. Dispersion characteristics of TE-EMWs existing in a transversely magnetized FM medium (a, c) and FM metamaterial (b, d). Region I is a DPS medium, region II is a MNG medium, region III is a DNG medium, and region IV is an ENG medium. The results of the analytical theory (a, b) and the results of numerical simulation in MaxLLG (c, d) are shown. The calculations are performed for H0 = 0.3 T, 4πM0 = 1750 G, εот = 16, r1 = 0.01 cm, r2 = 0.03 cm, T = 0.2 cm, and σ = 108 S/m.

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5. Fig. 4. Frequency dependences of the effective material parameters µeff⏊ (curve 1) and εeff⏊ (curve 2) of a bigyrotropic medium, obtained by changing the electron concentration in the plasma N: 5 × 1011 (a), 2 × 1012 (b), 4 × 1012 (c) and 1017 cm–3 (d). The last value of N corresponds to the electron concentration in the FM semiconductor. Region I is a DPS medium, region II is a MNG medium, region III is a DNG medium and region IV is an ENG medium. The calculations are performed for H0 = 0.3 T, 4πM0 = 1750 G and εот = 16.

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6. Fig. 5. Dispersion characteristics of TE-EMW existing in a transversely magnetized bigyrotropic medium, obtained by changing the electron concentration in the plasma N: 5 × 1011 (a), 2 × 1012 (b), 4 × 1012 (c) and 1017 cm–3 (d). The last value of N corresponds to the electron concentration in the FM semiconductor. Region I is a DPS medium, region II is a MNG medium, region III is a DNG medium and region IV is an ENG medium. The calculations are performed for H0 = 0.3 T, 4πM0 = 1750 G and εот = 16.

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