Three-Photon Laser Excitation of Single Rydberg Rubidium Atoms in an Optical Dipole Trap
- Authors: Beterov I.I.1,2,3,4, Yakshina E.A.5,1, Tret'yakov D.B.5,1, Al'yanova N.V.5,1,6, Skvortsova D.A.5,4, Suliman G.1, Zagirov T.R.1, Entin V.M.5, Ryabtsev I.I.5,1
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Affiliations:
- Novosibirsk State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
- Institute of Laser Physics, Siberian Branch of Russian Academy of Sciences
- Novosibirsk State Technical University
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 164, No 2 (2023)
- Pages: 282-290
- Section: Articles
- URL: https://archivog.com/0044-4510/article/view/653677
- DOI: https://doi.org/10.31857/S0044451023080151
- EDN: https://elibrary.ru/ICOQCS
- ID: 653677
Cite item
Abstract
Three-photon laser excitation of single rubidium atoms in an optical dipole trap (ODT) into the 37P Rydberg state by laser radiation with wavelengths of 780, 1367, and 743 nm has been experimentally demonstrated. The excitation to Rydberg states is detected by an optical method using the losses of atoms in the ODT. The laser excitation spectra of single Rydberg atoms in the ODT are recorded, and the dependence of the excitation probability on the laser pulse duration is measured. The measured spectrum width was 2 MHz. Experiments on fluorescence quenching spectroscopy of a cloud of cold atoms in a magneto-optical trap during the three-photon laser excitation of atoms to Rydberg states are also carried out. The experimental results are compared with a numerical calculation. Methods for increasing the accuracy of the coherent three-photon laser excitation of Rydberg atoms in the ODT are considered.
About the authors
I. I. Beterov
Novosibirsk State University;Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences;Institute of Laser Physics, Siberian Branch of Russian Academy of Sciences;Novosibirsk State Technical University
Email: beterov@isp.nsc.ru
Novosibirsk, 630090 Russia;Novosibirsk, 630090 Russia;Novosibirsk, 630090 Russia;Novosibirsk, 630073 Russia
E. A. Yakshina
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences;Novosibirsk State University
Email: beterov@isp.nsc.ru
Novosibirsk, 630090 Russia;Novosibirsk, 630090 Russia
D. B. Tret'yakov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences;Novosibirsk State University
Email: beterov@isp.nsc.ru
Novosibirsk, 630090 Russia;Novosibirsk, 630090 Russia
N. V. Al'yanova
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences;Novosibirsk State University;Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences
Email: beterov@isp.nsc.ru
Novosibirsk, 630090 Russia;Novosibirsk, 630090 Russia;Novosibirsk, 630073 Russia
D. A. Skvortsova
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences;Novosibirsk State Technical University
Email: beterov@isp.nsc.ru
Novosibirsk, 630090 Russia;Novosibirsk, 630072 Russia
G. Suliman
Novosibirsk State University
Email: beterov@isp.nsc.ru
Novosibirsk, 630090 Russia
T. R. Zagirov
Novosibirsk State University
Email: beterov@isp.nsc.ru
Novosibirsk, 630090 Russia
V. M. Entin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: beterov@isp.nsc.ru
Novosibirsk, 630090 Russia
I. I. Ryabtsev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences;Novosibirsk State University
Author for correspondence.
Email: beterov@isp.nsc.ru
Novosibirsk, 630090 Russia;Novosibirsk, 630090 Russia
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